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Date : 1997-12-23
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Optical Properties of Gallium Arsenide and Indium Gallium ~ In this thesis we investigate the optical properties of modulation doped GaAsAlGaAs and strainedlayer undoped InGaAsGaAs multiple quantum well structures MQWS The phenomena studied are the effects of carrier strain and the electric field on the absorption of excitons For GaAsAlGaAs modulation doped MQWS the quenching of excitons by free carriers has been demonstrated The comparison
CRC Press Online Series Optoelectronic Properties of ~ Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study This volume focuses on the physics technology and applications of strained layer quantum wells and superlattices featuring chapters on aspects ranging from theoretical modeling of
IDEALS Illinois Optical properties of gallium arsenide ~ Optical properties of gallium arsenide and indium gallium arsenide quantum wells and their applications to optoelectronic devices Welcome to the IDEALS Repository JavaScript is disabled for your browser Some features of this site may not work without it
StrainedLayer Quantum Wells and Their Applications M O ~ Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study This volume focuses on the physics technology and applications of strained layer quantum wells and superlattices featuring chapters on aspects ranging from theoretical modeling of quantumwell lasers to materials characterization and assessment by the most prominent researchers in the
StrainedLayer Quantum Wells and Their Applications 1st ~ Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study This volume focuses on the physics technology and applications of strained layer quantum wells and superlattices featuring chapters on aspects ranging from theoretical modeling of quantumwell lasers to materials characterization and assessment by the most prominent researchers in the field






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